IRFBF20LPBF

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 900 V
Package / Case : TO-262
Continuous Drain Current : 1.7 A
Resistance Drain-Source RDS (on) : 8 Ohms


Features:






Specifications






Description

      The IRFBF20LPbF is designed as HEXFET power MOSFET.It would provide the designers with the best combination of fast switching, ruggedized device design, low-on-resistance and cost-effectiveness.
      IRFBF20LPbF has seven features.The first one is that it would have surface mount.The second one is that it would be available in tape & reel.The next one is that it would have dynamic dv/dt rating.The next one is that it would have 150°C operating temperature.The next one is that it would have fast switching.The nest one is that it would be fully avalanche rated.The last one is that it would be lead-free.That are all the features.
      Some absolute maximum ratings IRFBF20LPbF have been concluded into several points as follow.The first one is about its continuous drain current @Tc=25°C which would be 1.7A.The second one is about its continuous drain current @Tc=100°C which would be 1.1A.The next one is about its pulse drain current which would be 6.8A.The next one is about its power dissipation which would be 3.1W @Ta=25°C and would be 54W at Tc=25°C.The next one is about its linear derating factor which would be 0.43W/°C.The nest one is about its gate to source voltage which would be +/- 20V.The next one is about its single pulse avalanche energy which would be 180mJ.The next one is about its avalanche current which would be 1.7A.The next one is about ts repitive avalanche energy which would be 5.4mJ.The next one is about its peak diode recovery dv/dt which would be 1.5V/ns.The next one is about its operating junction and storage temperature range which would be from -55 to +150°C.The last one is solering temperature, for 10 seconds which would be 300°C.And so on.
      Also there are some electrical characteristics IRFBF20LPbF @ Tj=25°C unless otherwise specified about it.The first one is about its drain to source breakdown voltage which would be min 900V with condition of Vgs=0V, Id=250uA.The second one is about its breakdown voltage temp. coefficient which would be typ 1.1V/°C.The next one is about its gate threshold voltage which would be min 2.0V and max 4.0V with condition of Vds=Vgs, Id=250uA.And so on.For more information please contact us.