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IRFB11N50A

MOSFET N-Chan 500V 11 Amp

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SeekIC No. : 00158540 Detail

IRFB11N50A: MOSFET N-Chan 500V 11 Amp

IRFB11N50A Data Sheet

floor Price/Ceiling Price

US $ 1.81~1.93 / Piece | Get Latest Price
Part Number:
IRFB11N50A
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~725
  • 725~1000
  • 1000~2000
  • Unit Price
  • $1.93
  • $1.85
  • $1.81
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/15

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.52 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.52 Ohms


Application

 Switch Mode Power Supply ( SMPS )
 Uninterruptable Power Supply
 High speed power switching


Specifications
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
174Ü
A
ID @ TC = 100
Continuous Drain Current, VGS @ 10V
123Ü
IDM
Pulsed Drain Current Å
680
PD @TA = 25°C
Power Dissipation á
330
W
PD @TC = 25°C
Power Dissipation
2.2
Linear Derating Factor
+30
W/°C
VGS
Gate-to-Source Voltage
560
V
TSTG
Peak Diode Recovery dv/dt É
See Fig.12a, 12b, 15, 16
V/ns
Storage Temperature Range
Soldering Temperature, for 10 seconds
300
°C

TJ
TSTG

 Operating Junction and
Storage Temperature Range		 -40 to + 175
-55 to + 175
Recommended clip force
20
N



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