IRFB13N50A

MOSFET N-Chan 500V 14 Amp

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IRFB13N50A Picture
SeekIC No. : 00158541 Detail

IRFB13N50A: MOSFET N-Chan 500V 14 Amp

floor Price/Ceiling Price

US $ 2.32~2.48 / Piece | Get Latest Price
Part Number:
IRFB13N50A
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~725
  • 725~1000
  • 1000~2000
  • Unit Price
  • $2.48
  • $2.38
  • $2.32
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Month Sales

268 Transactions

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 0.45 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 0.45 Ohms


Application

Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply
 High Speed Power Switching



Specifications

Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
14
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
9.1
IDM
Pulsed Drain Current Å
56
PD @TA = 25°C
Power Dissipation á
250
W
PD @TC = 25°C
Power Dissipation
2.0
Linear Derating Factor
+20
W/°C
VGS
Gate-to-Source Voltage
± 30
V
TSTG
Peak Diode Recovery dv/dt É
-55 to + 150
V/ns
Storage Temperature Range
Soldering Temperature, for 10 seconds
300
°C
Mounting torqe, 6-32 or M3 screwÜ
20



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