IRFBG30PBF

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Resistance Drain-Source RDS (on) : 5000 mOhms
Continuous Drain Current : 3.1 A
Drain-Source Breakdown Voltage : 1 KV


Description

The features of IRFBG30PBF are: (1)dynamic dv/dt rating; (2)repetitive avalanche rated; (3)fast switching; (4)ease of paralleling; (5)simple drive requirements.

The following is about the absolute maximum ratings of IRFBG30PBF: (1)continuous drain current, VGS @ 10V: 3.1A; (2)continuous drain current, VGS @ 10V: 2.0A; (3)drain current-pulse: 12A; (4)power dissipation: 125W; (5)linear derating factor: 1.0W/; (6)operating junction and storage temperature range: -55 to +150.

The electrical characteristics of the IRFBG30PBF are: (1)drain-source breakdown voltage: 1000V min at VGS=0V, ID=250A; (2)breakdown voltage temp. coefficient: 1.4V/ typ at reference to 25, ID=1mA; (3)static drain-source on-state resistance: 5.0 max at VGS=10V, ID=1.9A; (4)gate thresholad voltage: 2.0V min and 4.0V max at VDS=VGS, ID=250A; (5)gate-source forward leakage: 100nA max at VGS=20V; (6)gate-source reverse leakage: -100nA max at VGS=-20V; (7)drain-source leakage current: 100A min at VDS=1000V, VGS=0V.