Features: Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of ParallelingSpecifications Parameter Units ID @ VGS = -10V, TC = 25°C Continuous Drain Current 2.5 A ID @ VGS = -10V, TC = 100°C Continuous Drain Current 1.5 I...
IRFF430: Features: Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of ParallelingSpecifications Parameter Units ID @ VGS = -10V, TC = 25°C C...
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Parameter | Units | ||
ID @ VGS = -10V, TC = 25°C | Continuous Drain Current | 2.5 | A |
ID @ VGS = -10V, TC = 100°C | Continuous Drain Current | 1.5 | |
IDM | Pulsed Drain Current | 11 | |
PD @ TC = 25°C | Max. Power Dissipation | 25 | W |
Linear Derating Factor | 0.20 | W/°C | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy . | 0.35 | mJ |
IAR | Avalanche Current . | - | A |
EAR | Repetitive Avalanche Energy | - | mJ |
dv/dt | Peak Diode Recovery dv/dt . | 3.5 | V/ns |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 | °C |
Lead Temperature | 300 (0.063 in. (1.6mm) from case for 10s) | ||
Weight | 0.98(typical) | g |