IRFF230

Features:

• 5.5A, 200V
• r_DS(ON) = 0.400Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 "Guidelines for Soldering Surface MountComponents to PC Boards"


Pinout




Specifications

IRFF230 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . V_DS 200 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . .  V_DGR 200 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . .  I_D 5.5 A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . I_DM 22 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GS ±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . .P_D 25 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.2 W/
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . .E_AS 85 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . T_J, T_STG -55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . .T_L 300
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . T_pkg 260





Description

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs IRFF230 are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Formerly developmental type IRFF230.