HEX/MOS NCH 30V 250A SUPER D2PAK
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Parameter |
Max. |
Units | |
ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V |
260 Ü |
A |
ID @ TC = 100°C |
Continuous Drain Current, VGS @ 10V |
180 Ü | |
IDM |
Pulsed Drain Current Å |
1000 | |
PD @TA = 25°C |
Power Dissipation á |
300 |
W |
PD @TC = 25°C |
Power Dissipation |
3.8 | |
Linear Derating Factor |
2.0 |
W/°C | |
VGS |
Gate-to-Source Voltage |
± 20 |
V |
TSTG |
Peak Diode Recovery dv/dt É |
-55 to + 150 |
V/ns |
Storage Temperature Range | |||
Soldering Temperature, for 10 seconds |
300 |
°C | |
Mounting torqe, 6-32 or M3 screwÜ |
10 |
Technical/Catalog Information | IRFBL3703 |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 260A |
Rds On (Max) @ Id, Vgs | 2.5 mOhm @ 76A, 10V |
Input Capacitance (Ciss) @ Vds | 8250pF @ 25V |
Power - Max | 3.8W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 209nC @ 10V |
Package / Case | Super D2-Pak |
FET Feature | Standard |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | IRFBL3703 IRFBL3703 |