IRFD224

Series: -
Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Power - Max: 1W
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) @ Vds: 260pF @ 25V
Drain to Source Voltage (Vdss): 250V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Supplier Device Package: 4-DIP, Hexdip, HVMDIP
Current - Continuous Drain (Id) @ 25° C: 630mA
Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 380mA, 10V


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	0.63	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	0.40
IDM	Pulsed Drain Current 	5.0
PD @TC = 25°C	Power Dissipation	1.0	W
	Linear Derating Factor	0.0083	W/°C
VGS	Gate-to-Source Voltage	± 20	V
EAS	Single Pulse Avalanche Energy‚	60	mJ
IAR	Avalanche Current	0.63	A
EAR	Repetitive Avalanche Energy	0.10	mJ
dv/dt	Peak Diode Recovery dv/dt	4.8	V/ns
TJ	Operating Junction and	-55 to + 150	°C
TSTG	Storage Temperature Range
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )

Description

Third Generation HEXFETs from International Rectifier IRFD224 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The 4-pin DIP package IRFD224 is a low-cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain  serves as a thermal link to the mounting surface for power dissipation levels up to 1 watt.