IRFD214

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Configuration : Single Dual Drain
Package / Case : HexDIP-4
Resistance Drain-Source RDS (on) : 2000 mOhms
Continuous Drain Current : 0.45 A


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	0.45	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	0.29
IDM	Pulsed Drain Current 	3.6
PD @TC = 25°C	Power Dissipation	1.0	W
	Linear Derating Factor	0.0083	W/°C
VGS	Gate-to-Source Voltage	± 20	V
EAS	Single Pulse Avalanche Energy‚	57	mJ
IAR	Avalanche Current	0.45	A
EAR	Repetitive Avalanche Energy	0.10	mJ
dv/dt	Peak Diode Recovery dv/dt	4.8	V/ns
TJ	Operating Junction and	-55  to + 150	°C
TSTG	Storage Temperature Range
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )

Description

Third Generation HEXFETs IRFD214 from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The 4-pin DIP package IRFD214 is a low-cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 watt.