IRFBG20

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 1.4 A
Drain-Source Breakdown Voltage : 1000 V
Resistance Drain-Source RDS (on) : 11 Ohms


Description

The features of IRFBG20 are: (1)dynamic dv/dt rating; (2)repetitive avalanche rated; (3)fast switching; (4)ease of paralleling; (5)simple drive requirements.

The following is about the absolute maximum ratings of IRFBG20: (1)continuous drain current, VGS @ 10V: 1.4A; (2)continuous drain current, VGS @ 10V: 0.86A; (3)drain current-pulse: 5.6A; (4)power dissipation: 54W; (5)linear derating factor: 0.43W/; (6)operating junction and storage temperature range: -55 to +150.

The electrical characteristics of the IRFBG20 are: (1)drain-source breakdown voltage: 1000V min at VGS=0V, ID=250A; (2)breakdown voltage temp. coefficient: 1.2V/ typ at reference to 25, ID=1mA; (3)static drain-source on-state resistance: 11 max at VGS=10V, ID=0.84A; (4)gate thresholad voltage: 2.0V min and 4.0V max at VDS=VGS, ID=250A; (5)gate-source forward leakage: 100nA max at VGS=20V; (6)gate-source reverse leakage: -100nA max at VGS=-20V; (7)drain-source leakage current: 100A min at VDS=1000V, VGS=0V.