IRFF420

Features:

• 1.6A, 500V
• r_DS(ON) = 3.000Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Pinout




Specifications

                                                                                                           IRFF420             UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . .V_DS          500                     V
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . .  . V_DGR         500                     V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . .  I_D          1.6                      A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . I_DM          6.5                      A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..V_GS         ±20                      V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . ..P_D            20                     W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .         0.16                   W/
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . .E_AS           210                      mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . T_J, T_STG     -55 to 150                  
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . T_L           300                      
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . Tpkg           260                       


Description

This N-Channel enhancement mode silicon gate power field effect transistor IRFF420 is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers,relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.These types can be operated directly from integrated circuits.

Formerly developmental type IRFF420.