IRFC350

The features of IRFC350 are: (1)fast switching times; (2)low RDS(on) HDMOS TM process; (3)rugged polysilicon gate cell structure; (4)excellent high voltage stability; (5)low input capacitance; (6)improved high temperature reliability.

The electrical characteristics of the IRFC350 are: (1)drain-source breakdown voltage: 400V min at VGS=0V, ID=250A; (2)gate thresholad voltage: 2.0V min and 4.0V max at VDS=VGS, ID=250A; (3)gate-source leakage current: ±100nA max at VGS=±20V; (4)zero gate voltage drain current: 250A max; (5)static drain-source on-state resistance: 0.3 max at VGS=10V, ID=20A; (6)ciss input capacitance: 3000pF; (7)coss output capacitance: 500pF; (8)crss reverse transfer capacitance: 200pF max.