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Power MOSFET IRFIBF20G, SiHFIBF20G
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Power MOSFET IRFIBE30G, SiHFIBE30G
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The IRFIBE20GPbF is designed as third generation HEXFET fro international recitifier which provide the designer with the best conbination of fast switching, ruggedized device design, low on-resistance and cost-effectiven...
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Power MOSFET IRFIBE20G, SiHFIBE20G
Vendor:Other Category:Other
The IRFIBC40GPbF is designed as third generation HEXFET from international recitifier which provide the designer with the best conbination of fast switching, ruggedized device design, low on-resistance and cost-effective...
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The IRFIBC40GLCPbF is deisgned as the third generational HEXFET from international rectifier which provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-ef...
Vendor:Other Category:Other
IRFIBC40GLC is a kind of HEXFET power MOSFET. There are some features as follows. First is isolated package. The second is high voltage isolation which is 2.5 KVRMS. Then is sink to lead creepage dist which is 4.8 mm. Ne...
Vendor:Other Category:Other
Power MOSFET IRFIBC40G, SiHFIBC40G
Vendor:Other Category:Other
Power MOSFET IRFIBC30G, SiHFIBC30G
Vendor:Other Category:Other
The IRFIBC20GPbF is designed as third generation HEXFET from international recitifier which provide the designer with the best conbination of fast switching, ruggedized device design, low on-resistance and cost-effective...
Vendor:Other Category:Other
Power MOSFET IRFIBC20G, SiHFIBC20G
Vendor:Other Category:Other
Mfg:IR Pack:TO-220F D/C:08+ Vendor:Other Category:Other
Vendor:Other Category:Other
IRFIB7N50LPbF is a kind of SMPS MOSFET.Here you can get some information about the features and benefits.First,superfast body diode eliminates the need for external diodes in ZVS applications.Secondly,lower gate ch...
Vendor:Other Category:Other
These are the Features and Benefits of IRFIB7N50L:
Firstly, superfast body diode eliminates the need for external diodes in AVS applications. Secondly, lower gate charge results in simpler drive requirements...
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Mfg:IR Pack:TO-220F D/C:05+ Vendor:Other Category:Other
Mfg:IR Pack:1599 D/C:IC Vendor:Other Category:Other
Mfg:VISHAY D/C:07+ Vendor:Other Category:Other
Mfg:IR Pack:TO-220F D/C:04+ Vendor:Other Category:Other
Mfg:IR Pack:TO-220F D/C:08+ Vendor:Other Category:Other
Mfg:TO-220FullPak(Iso) Pack:7850 D/C:IR Vendor:Other Category:Other
Mfg:IR Pack:TO-220 D/C:04+ Vendor:International Rectifier Category:Discrete Semiconductor Products
HEX/MOS P-CH -55V -14A TO-220FPFifth Generation HEXFETs IRFI9Z34N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and r...
Vendor:Other Category:Other
Power MOSFET IRFI9Z34G, SiHFI9Z34G
Mfg:IR Pack:TO-220 D/C:04+ Vendor:International Rectifier Category:Discrete Semiconductor Products
HEX/MOS P-CH -55V -9.5A TO-220FPFifth Generation HEXFETs IRFI9Z24N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rug...
Vendor:Other Category:Other
Power MOSFET IRFI9Z24G, SiHFI9Z24G
Mfg:IR Pack:TO-220 D/C:05+ Vendor:Other Category:Other
Third generation Power MOSFETs IRFI9Z24G from Vishay provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.The TO-220 FULLPAK IRFI9Z24G elimin...
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Power MOSFET IRFI9Z14G, SiHFI9Z14G
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Power MOSFET IRFI9640G, SiHFI9640G
Vendor:Other Category:Other
Power MOSFET IRFI9634G, SiHFI9634G
Mfg:IR Pack:03+ D/C:To-220F Vendor:Other Category:Other
Third Generation HEXFETs IRFI9634G from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.Third Generation HEXFET...
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Power MOSFET IRFI9630G, SiHFI9630G
Vendor:Other Category:Other
Power MOSFET IRFI9620G, SiHFI9620G
Vendor:Other Category:Other
Power MOSFET IRFI9610G, SiHFI9610G
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Fifth Generation HEXFETs IRFI9540N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rug...
Vendor:Other Category:Other
Power MOSFET IRFI9540G, SiHFI9540G
Vendor:Other Category:Other
Power MOSFET IRFI9530G, SiHFI9530G
Mfg:IR Vendor:Other Category:Other
Fifth Generation HEXFETs IRFI9520N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and r...
Vendor:Other Category:Other
Power MOSFET IRFI9520G, SiHFI9520G
Vendor:Other Category:Other
The IRFI840GLC has 7 features.The first one is ultra low gate change.The second one is reduced gate drive requirement.The third one is enhanced 30V VGS rating.The fourth one is isolated package.The fifth one is high volt...
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Power MOSFET IRFI840G, SiHFI840G
Mfg:IR Pack:06+ D/C:I2-PAK Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFI840B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology IRFI840B has been especially tailored to minimize on-st...
Vendor:Other Category:Other
Power MOSFET IRFI830G, SiHFI830G
Mfg:Fairchild Pack:TO-262 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFI830B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology IRFI830B has been especially tailored to minimize on-st...
Vendor:Other Category:Other
Power MOSFET IRFI820G, SiHFI820G
Mfg:Fairchild Pack:TO-262 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFI820B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology IRFI820B has been especially tailored to minimize on-st...
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Power MOSFET IRFI744G, SiHFI744G
Vendor:Other Category:Other
Power MOSFET IRFI740G, SiHFI740G
Mfg:FAIRC Pack:TO-262(I2PAK) D/C:09+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFI740B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology IRFI740B has been especially tailored to minimize on-st...
Mfg:IR Pack:TO-220 D/C:05+ Vendor:Other Category:Other
Vendor:Other Category:Other
Power MOSFET IRFI734G, SiHFI734G
Vendor:Other Category:Other
Power MOSFET IRFI730G, SiHFI730G
Mfg:Fairchild Pack:TO-262 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology of the IRFI730B has been especially tailored to minimize on-stat...
Vendor:Other Category:Other
Power MOSFET IRFI720G, SiHFI720G
Mfg:Fairchild Pack:TO-262 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFI720B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology IRFI720B has been especially tailored to minimize on-st...
Mfg:Fairchild Pack:TO-262 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFI710B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology IRFI710B has been especially tailored to minimize on-st...
Mfg:Fairchild Pack:TO-262 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFI654B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology IRFI654B has been especially tailored to minimize on-st...
Mfg:Fairchild Pack:TO-262 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFI650B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology IRFI650B has been especially tailored to minimize on-st...
Vendor:Other Category:Other
Power MOSFET IRFI644G, SiHFI644G
Mfg:Fairchild Pack:TO-262 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFI644B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology IRFI644B has been especially tailored to minimize on-st...
Vendor:Other Category:Other
Power MOSFET IRFI640G, SiHFI640G
Mfg:IR Pack:06+ D/C:I2-PAK Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFI640B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology IRFI640B has been especially tailored to minimize on-st...
Vendor:Other Category:Other
Power MOSFET IRFI634G, SiHFI634G
Mfg:IR Pack:06+ D/C:I2-PAK Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology of the IRFI634B has been especially tailored to minimize on-stat...
Vendor:Other Category:Other
Power MOSFET IRFI630G, SiHFI630G
Mfg:Fairchild Pack:TO-262 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology of the IRFI630B has been especially tailored to minimize on-stat...
Vendor:Other Category:Other
Power MOSFET IRFI624G, SiHFI624G
Mfg:Fairchild Pack:TO-262 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology of the IRFI624B has been especially tailored to minimize on-stat...
Vendor:Other Category:Other
Power MOSFET IRFI620G, SiHFI620G
Mfg:Fairchild Pack:TO-262 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors of the IRFI620B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology of the IRFI620B has been especially tailored to ...
Vendor:Other Category:Other
Power MOSFET IRFI614G, SiHFI614G
Mfg:Fairchild Pack:TO-262 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology of the IRFI614B has been especially tailored to minimize on-stat...
Mfg:Fairchild Pack:TO-262 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology of the IRFI610B has been especially tailored to minimize on-stat...
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 100V 20A TO220FPFifth Generation HEXFETs IRFI540N from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit,combined with the fast switching speed and...
Vendor:Other Category:Other
Power MOSFET IRFI540G, SiHFI540G
Vendor:Other Category:Other
The IRFI540G has seven features.The first one is isolated package.The second one is high voltage isolation=2.5KVRMS.The third one is sink to lead creepage dist.=4.8mm.The fourth one is 175 operating temperature.The fifth...
Vendor:Other Category:Other
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedi...
Vendor:Other Category:Other
Power MOSFET IRFI530G, SiHFI530G
Mfg:IR Pack:06+ D/C:TO-220 Vendor:Other Category:Other
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized de...
Vendor:Other Category:Other
Fifth Generation HEXFETs of the IRFI520N from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit,combined with the fast switching sp...
Vendor:Other Category:Other
Power MOSFET IRFI520G, SiHFI520G
Vendor:Other Category:Other
Power MOSFET IRFI510G, SiHFI510G
Mfg:IR Pack:TO-220 D/C:04+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 55V 41A TO-220FPFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized de...
Mfg:TO-220Full-Pak5-Pin Pack:7850 D/C:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 100V 11A TO-220FP-5
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 11A TO-220FP-5This Digital Audio MosFET Half-Bridge of the IRFI4024H-117P is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest p...
Mfg:TO-220Full-Pak5-Pin Pack:7850 D/C:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 150V 8.7A TO-220FP-5This Digital Audio MosFET Half-Bridge of the IRFI4019H-117P is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest p...
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Fifth Generation HEXFETs IRFI3710 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...
Mfg:IR Pack:TO-22OF D/C:09+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 64A TO220FPFifth Generation HEXFETs IRFI3205 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...
Mfg:IR Pack:TO-259AA D/C:05+ Vendor:Other Category:Other
HEXFET technology IRFI260 is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.HEXFET ...
Vendor:Other Category:Other
Fifth Generation HEXFETs IRFI1310N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rug...
Mfg:IR Pack:TO-220F D/C:08+ Vendor:Other Category:Other
Fourth Generation HEXFETs of the IRFI1310G from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching...
Mfg:N/A Pack:NA/ D/C:09+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 49A TO220FPFifth Generation HEXFETs of the IRFI1010N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed ...
Vendor:Other Category:Other
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 30V 24A 8-PQFNThe IRFH7932TRPBF is designed as one kind of HEXFET power MOSFETs with typical applications of synchronous MOSFET for notebook processor power and synchronous rectifer MOSFET for isolated DC-DC converters in networking s...
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Mfg:IR Pack:MO-036AB D/C:05+ Vendor:Other Category:Other
Mfg:IR Pack:MO-036AB D/C:05+ Vendor:Other Category:Other
Pack:DIP[] Vendor:Other Category:Other
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