IRFIB5N65A

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 650 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-220 Full-Pak
Continuous Drain Current : 5.1 A
Resistance Drain-Source RDS (on) : 0.93 Ohms


Application

·Switch Mode Power Supply (SMPS)
·Uninterruptible Power Supply
·High Speed Power Switching
·High Voltage Isolation = 2.5KVRMS


Specifications

	Parameter	Max	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	5.1	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	3.2
IDM	Pulsed Drain Current	21
PD @TC = 25°C	Power Dissipation	60	W
	Linear Derating Factor	0.48	W/°C
VGS	Gate-to-Source Voltage	±30	V
dv/dt	Peak Diode Recovery dv/dt	2.8	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 150	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torqe, 6-32 or M3 screw	10 lbf•in (1.1N•m)