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IRFI1310G

Features: `Advanced Process Technology`Ultra Low On-Resistance`Isolated Package`High Voltage Isolation = 2.5KVRMS`Sink to Lead Creepage Dist. = 4.8mm`Repetitive Avalanche Rated`175°C Operating TemperatureSpecifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Curren...

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IRFI1310G: Features: `Advanced Process Technology`Ultra Low On-Resistance`Isolated Package`High Voltage Isolation = 2.5KVRMS`Sink to Lead Creepage Dist. = 4.8mm`Repetitive Avalanche Rated`175°C Operating Tempe...

IRFI1310G Data Sheet

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Part Number:
IRFI1310G
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Description



Features:

`Advanced Process Technology
`Ultra Low On-Resistance
`Isolated Package
`High Voltage Isolation = 2.5KVRMS
`Sink to Lead Creepage Dist. = 4.8mm
`Repetitive Avalanche Rated
`175°C Operating Temperature


Specifications

 
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
22
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
15
IDM Pulsed Drain Current
88
PD @TC = 25°C Power Dissipation
48
W
  Linear Derating Factor
0.32
W/
VGS Gate-to-Source Voltage
± 20
V
EAS Single Pulse Avalanche Energy
120
mJ
IAR Avalanche Current
22
A
EAR Repetitive Avalanche Energy
4.8
mJ
dv/dt Peak Diode Recovery dv/dt
5.5
V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 175
  Soldering Temperature, for 10 seconds
300 (1.6mm from case )
  Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)



Description

Fourth Generation HEXFETs of the IRFI1310G from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The TO-220 Fullpak of the IRFI1310G eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.




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