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IRFI1010N

MOSFET N-CH 55V 49A TO220FP

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SeekIC No. : 004377083 Detail

IRFI1010N: MOSFET N-CH 55V 49A TO220FP

IRFI1010N Data Sheet

floor Price/Ceiling Price

US $ 7.73~7.73 / Piece | Get Latest Price
Part Number:
IRFI1010N
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~150
  • Unit Price
  • $7.73
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Description



Features:

· Advanced Process Technology
· Isolated Package
· High Voltage Isolation = 2.5KVRMS …
· Sink to Lead Creepage Dist. = 4.8mm
· Fully Avalanche Rated


Specifications

 
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 49
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 35
IDM Pulsed Drain Current 290
PD @TC = 25°C Power Dissipation 58
W
  Linear Derating Factor 0.38
W/
VGS Gate-to-Source Voltage ± 20
V
EAS Single Pulse Avalanche Energy 360
mJ
IAR Avalanche Current 43
A
EAR Repetitive Avalanche Energy 5.8
mJ
dv/dt Peak Diode Recovery dv/dt 5.0
V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )
  Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)



Description

Fifth Generation HEXFETs of the IRFI1010N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 Fullpak of the IRFI1010N eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.




Parameters:

Technical/Catalog InformationIRFI1010N
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C49A
Rds On (Max) @ Id, Vgs12 mOhm @ 26A, 10V
Input Capacitance (Ciss) @ Vds 2900pF @ 25V
Power - Max58W
PackagingBulk
Gate Charge (Qg) @ Vgs130nC @ 10V
Package / CaseTO-220-3 Fullpak (Straight Leads)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRFI1010N
IRFI1010N



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