IRFI5210

Features:

Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS …
Sink to Lead Creepage Dist. = 4.8mm
P-Channel
Fully Avalanche Rated


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ -10V	-23	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ -10V	-16
IDM	Pulsed Drain Current	-140
PD @ TC = 25°C	Power Dissipation	63	W
	Linear Derating Factor	0.42	W/°C
VGS	Gate-to-Source Voltage	± 20	V
EAS	Single Pulse Avalanche Energy	690	mJ
IAR	Avalanche Current	-21	A
EAR	Repetitive Avalanche Energy	6.3	mJ
dv/dt	Peak Diode Recovery dv/dt†	-5.0	V/ns
TJ,TSTG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 srew	10 lbf•in (1.1N•m)

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak of the IRFI5210 eliminates the need for additional insulating hardware in commercial-industrial applications.

The moulding compound of the IRFI5210 used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.