IRFI4019H-117P

Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : 20 V
Continuous Drain Current : 8.7 A
Package / Case : TO-220FP
Configuration : Dual
Resistance Drain-Source RDS (on) : 95 mOhms


Features:

·Integrated Half-Bridge Package
·Reduces the Part Count by Half
·Facilitates Better PCB Layout
·Key Parameters Optimized for Class-D
Audio Amplifier Applications
·Low RDS(ON) for Improved Efficiency
·Low Qg and Qsw for Better THD and
Improved Efficiency
·Low Qrr for Better THD and Lower EMI
·Can Delivery up to 200W per Channel into
8Ω Load in Half-Bridge Configuration
Amplifier
·Lead-Free Package


Specifications

	Parameter	Max.	Units
VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM EAS PD @TC = 25°C PD @TC = 100°C TJ TSTG	Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw	150 20 8.7 6.2 34 77 18 7.2 0.15 -55to+150 300 10lb.in (1.1N.m)	V A mJ W W/°C °C

Description

This Digital Audio MosFET Half-Bridge of the IRFI4019H-117P is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and internal Gate resistance of the IRFI4019H-117P are optimized to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable device for Class D audio amplifier applications.

Parameters:

Technical/Catalog Information	IRFI4019H-117P
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25° C	8.7A
Rds On (Max) @ Id, Vgs	95 mOhm @ 5.2A, 10V
Input Capacitance (Ciss) @ Vds	810pF @ 25V
Power - Max	18W
Packaging	Tube
Gate Charge (Qg) @ Vgs	20nC @ 10V
Package / Case	TO-220-5 Fullpak (Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFI4019H 117P IRFI4019H117P