Maximum Operating Temperature
:
Transistor Polarity
: N-Channel
Mounting Style
: Through Hole
Packaging
: Tube
Drain-Source Breakdown Voltage
: 150 V
Gate-Source Breakdown Voltage
: 20 V
Continuous Drain Current
: 8.7 A
Package / Case
: TO-220FP
Configuration
: Dual
Resistance Drain-Source RDS (on)
: 95 mOhms
Features: ·Integrated Half-Bridge Package
·Reduces the Part Count by Half
·Facilitates Better PCB Layout
·Key Parameters Optimized for Class-D
Audio Amplifier Applications
·Low RDS(ON) for Improved Efficiency
·Low Qg and Qsw for Better THD and
Improved Efficiency
·Low Qrr for Better THD and Lower EMI
·Can Delivery up to 200W per Channel into
8Ω Load in Half-Bridge Configuration
Amplifier
·Lead-Free PackageSpecifications
|
|
Parameter |
Max. |
Units |
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
EAS
PD @TC = 25°C
PD @TC = 100°C
TJ
TSTG
|
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw |
150
20
8.7
6.2
34
77
18
7.2
0.15
-55to+150
300
10lb.in (1.1N.m) |
V
A
mJ
W
W/°C
°C
|
DescriptionThis Digital Audio MosFET Half-Bridge of the IRFI4019H-117P is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and internal Gate resistance of the IRFI4019H-117P are optimized to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable device for Class D audio amplifier applications.
Parameters: | Technical/Catalog Information | IRFI4019H-117P |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25° C | 8.7A |
| Rds On (Max) @ Id, Vgs | 95 mOhm @ 5.2A, 10V |
| Input Capacitance (Ciss) @ Vds | 810pF @ 25V |
| Power - Max | 18W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 20nC @ 10V |
| Package / Case | TO-220-5 Fullpak (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFI4019H 117P
IRFI4019H117P
|
IRFI4019H-117P Data Sheet
