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IRFI830B

Features: • 4.5A, 500V, RDS(on) = 1.5Ω @VGS = 10 V• Low gate charge ( typical 27 nC)• Low Crss ( typical 17 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter IRFW830B / IRFI830B Unit VDSS ...

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SeekIC No. : 004377124 Detail

IRFI830B: Features: • 4.5A, 500V, RDS(on) = 1.5Ω @VGS = 10 V• Low gate charge ( typical 27 nC)• Low Crss ( typical 17 pF)• Fast switching• 100% avalanche tested• Impr...

IRFI830B Data Sheet

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Part Number:
IRFI830B
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 4.5A, 500V, RDS(on) = 1.5Ω @VGS = 10 V
• Low gate charge ( typical 27 nC)
• Low Crss ( typical 17 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter IRFW830B / IRFI830B Unit

VDSS

Drain-Source Voltage

 500 V

ID

Drain Current    - Continuous (TC = 25°C)
                         - Continuous (TC = 100°C)

4.5

A

2.9

 A

IDM

Drain Current    - Pulsed                                 (Note 1)

 18 A
VGSS Gate-Source Voltage ± 30 V

EAS

 Single Pulsed Avalanche Energy                     (Note 2) 270 mJ

IAR

 Avalanche Current                                          (Note 1)

4.5

A

EAR

Repetitive Avalanche Energy                          (Note 1)

7.3

mJ

 dv/dt

 Peak Diode Recovery dv/dt                            (Note 3)

 5.5

 V/ns

PD

Power Dissipation (TA = 25°C) *


3.13

W

 Power Dissipation (TC = 25°C)
                              - Derate above 25°C

73

 W

 0.58

 W/

TJ, Tstg

Operating and Storage Temperature Range

-55 to +150

TL

Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300




Description

These N-Channel enhancement mode power field effect transistors IRFI830B are produced using Fairchild's proprietary,planar, DMOS technology.

This advanced technology IRFI830B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies,power factor correction and electronic lamp ballasts based on half bridge.




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