IRFI530N

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 12A
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Input Capacitance (Ciss) @ Vds: 640pF @ 25V
Gate Charge (Qg) @ Vgs: 44nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Manufacturer: International Rectifier
Power - Max: 41W
Supplier Device Package: TO-220AB Full-Pak
Rds On (Max) @ Id, Vgs: 110 mOhm @ 6.6A, 10V


Features:

Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS …
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ -10V	12	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ -10V	8.6
IDM	Pulsed Drain Current	60
PD @ TC = 25°C	Power Dissipation	41	W
	Linear Derating Factor	0.27	W/°C
VGS	Gate-to-Source Voltage	± 20	V
EAS	Single Pulse Avalanche Energy	150	mJ
IAR	Avalanche Current	9.0	A
EAR	Repetitive Avalanche Energy	4.1	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
TJ,TSTG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 srew	10 lbf•in (1.1N•m)

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design of the IRFI530N that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation of the IRFI530N is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.