Features: · Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Electrically Isolated· Dynamic dv/dt Rating·Light-weightSpecifications Parameter Units ID @ VGS = -10V, TC = 25°C Continuous Drain Current -0.75 A ID @ VGS = -10V, TC = 100°C Cont...
IRFG9110: Features: · Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Electrically Isolated· Dynamic dv/dt Rating·Light-weightSpecifications Parameter Units ID @ ...
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Parameter |
Units | ||
ID @ VGS = -10V, TC = 25°C |
Continuous Drain Current |
-0.75 |
A |
ID @ VGS = -10V, TC = 100°C |
Continuous Drain Current |
-0.5 | |
IDM |
Pulsed Drain Current ➀ |
-3.0 | |
PD @ TC = 25°C |
Max. Power Dissipation |
1.4 |
W |
Linear Derating Factor |
0.011 |
W/°C | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulse Avalanche Energy ➁ |
75 |
mJ |
IAR |
Avalanche Current ➀ |
A | |
EAR |
Repetitive Avalanche Energy ➀ |
mJ | |
dv/dt |
Peak Diode Recovery dv/dt ➂ |
-5.5 |
V/ns |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 |
oC |
Lead Temperature |
300 ( 0.063 in.(1.6mm) from case for 10s | ||
Weight |
1.3 (typical) |
g |