Features: Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Dynamic dv/dt RatingLight-weightSpecifications Parameter N-Channel P-Channel Units ID @ VGS = 10V, TC = 25°C Continuous Drain Current 0.68 -0.68 A ID @ VGS = 10...
IRFG5210: Features: Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Dynamic dv/dt RatingLight-weightSpecifications Parameter N-Channel P-Channel Uni...
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Parameter |
N-Channel |
P-Channel |
Units | |
ID @ VGS = 10V, TC = 25°C |
Continuous Drain Current |
0.68 |
-0.68 |
A |
ID @ VGS = 10V, TC =1 00°C |
Continuous Drain Current |
0.4 |
-0.4 | |
IDM |
Pulsed Drain Current ➀ |
2.72➀ |
2.72➀ | |
PD @ TC = 25°C |
Max. Power Dissipation |
14 |
14 |
W |
Linear Derating Factor |
0.011 |
0.011 |
W/°C | |
VGS |
Gate-to-Source Voltage |
±20 |
±20 |
V |
EAS |
Single Pulse Avalanche Energy |
64➁ |
110➅ |
mJ |
IAR |
Avalanche Current ➀ |
- |
- |
A |
EAR |
Repetitive Avalanche Energy ➀ |
- |
- |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
20➂ |
27 |
V/ns |
TJ |
Operating Junction |
-55 to 150 |
||
TSTG |
Storage Temperature Range | |||
Lead Temperature |
300 (0.63 in./1.6 mm from case for 10s) | |||
Weight |
1.3 (Typical) |
g |