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IRFG5110

Features: Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Dynamic dv/dt Rating Light-weightSpecifications Parameter N-Channel P-Channel Units ID @ VGS = 10V, TC = 25°C Continuous Drain Current 1.0 -1.0 A ID @ VGS = 10V, TC...

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SeekIC No. : 004377076 Detail

IRFG5110: Features: Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Dynamic dv/dt Rating Light-weightSpecifications Parameter N-Channel P-Channel Un...

IRFG5110 Data Sheet

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Part Number:
IRFG5110
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/29

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Product Details

Description



Features:

 Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Dynamic dv/dt Rating
Light-weight


Specifications

Parameter
N-Channel
P-Channel
Units
ID @ VGS = 10V, TC = 25°C
 Continuous Drain Current 1.0 -1.0
A
ID @ VGS = 10V, TC =1 00°C
 Continuous Drain Current 0.6 -0.6
IDM
 Pulsed Drain Current ➀ 4.0 -4.0
PD @ TC = 25°C
 Max. Power Dissipation 1.4 1.4
W
 Linear Derating Factor 0.011 0.011
W/°C
VGS
 Gate-to-Source Voltage ±20 ±20
V
EAS
 Single Pulse Avalanche Energy 75 ➁ 75 ➄
mJ
IAR
 Avalanche Current ➀
-
-
A
EAR
 Repetitive Avalanche Energy ➀
-
-
mJ
dv/dt
 Peak Diode Recovery dv/dt 5.5 ➂ -5.5 ➅
V/ns
TJ
 Operating Junction -55 to 150
oC
TSTG
 Storage Temperature Range  
 Lead Temperature 300 (0.63 in./1.6 mm from case for 10s)
 Weight 1.3 (Typical)
g



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