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IRFI650B

Features: • 28A, 200V, RDS(on) = 0.085Ω @VGS = 10 V• Low gate charge ( typical 95 nC)• Low Crss ( typical 75 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter IRFW610B / IRFI610B Unit VDSS ...

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IRFI650B: Features: • 28A, 200V, RDS(on) = 0.085Ω @VGS = 10 V• Low gate charge ( typical 95 nC)• Low Crss ( typical 75 pF)• Fast switching• 100% avalanche tested• Imp...

IRFI650B Data Sheet

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Part Number:
IRFI650B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 28A, 200V, RDS(on) = 0.085Ω @VGS = 10 V
• Low gate charge ( typical 95 nC)
• Low Crss ( typical 75 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter IRFW610B / IRFI610B Unit

VDSS

Drain-Source Voltage

 200 V

ID

Drain Current    - Continuous (TC = 25°C)
                         - Continuous (TC = 100°C)

28

A

17.7

 A

TDM

Drain Current    - Pulsed                                 (Note 1)

 112 A
VGSS Gate-Source Voltage ± 30 V

EAS

 Single Pulsed Avalanche Energy                     (Note 2) 600 mJ

IAR

 Avalanche Current                                          (Note 1)

28

A

EAR

Repetitive Avalanche Energy                          (Note 1)

15.6

mJ

 dv/dt

Peak Diode Recovery dv/dt                            (Note 3)

 5.5

 V/ns

PD

Power Dissipation (TA = 25°C) *


3.13

W

Power Dissipation (TC = 25°C)
                              - Derate above 25°C

156

 W

1.25

 W/

TJ, Tstg

Operating and Storage Temperature Range

-55 to +150

TL

Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300




Description

These N-Channel enhancement mode power field effect transistors IRFI650B are produced using Fairchild's proprietary,planar, DMOS technology.

This advanced technology IRFI650B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters,switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.




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