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IRFI9Z34N

HEX/MOS P-CH -55V -14A TO-220FP

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SeekIC No. : 004377142 Detail

IRFI9Z34N: HEX/MOS P-CH -55V -14A TO-220FP

IRFI9Z34N Data Sheet

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Part Number:
IRFI9Z34N
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/29

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Product Details

Description



Specifications

Parameter

Max.
Units
ID @ VGS = 10V, TC = 25°C
 Continuous Drain Current, VGS@- 10V -14
A
ID @ VGS = 10V, TC =1 00°C
 Continuous Drain Current, VGS@- 10V -10
IDM
 Pulsed Drain Current ➀ - 68
PD @ TC = 25°C
 Power Dissipation 37
W
 Linear Derating Factor 0.24
W/°C
VGS
 Gate-to-Source Voltage ± 20
V
EAS
 Single Pulse Avalanche Energy ➁ 180
mJ
IAR
 Avalanche Current ➀ -10
A
EAR
 Repetitive Avalanche Energy ➀ 3.7
mJ
dv/dt
 Peak Diode Recovery dv/dt ➂ -5.0
V/ns
TJ
 Operating Junction and  -55 to + 175
TSTG
 Storage Temperature Range  
 Soldering Temperature, for 10 seconds 300 (1.6mm from case )
 Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
g



Description

Fifth Generation HEXFETs IRFI9Z34N from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.  The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink.  This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product.  The Fullpak IRFI9Z34N is mounted to a heatsink using a single clip or by a single screw fixing.




Parameters:

Technical/Catalog InformationIRFI9Z34N
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C14A
Rds On (Max) @ Id, Vgs100 mOhm @ 7.8A, 10V
Input Capacitance (Ciss) @ Vds 620pF @ 25V
Power - Max37W
PackagingTube
Gate Charge (Qg) @ Vgs35nC @ 10V
Package / CaseTO-220-3 Fullpak (Straight Leads)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRFI9Z34N
IRFI9Z34N



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