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IRFI9Z24N

HEX/MOS P-CH -55V -9.5A TO-220FP

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SeekIC No. : 004377140 Detail

IRFI9Z24N: HEX/MOS P-CH -55V -9.5A TO-220FP

IRFI9Z24N Data Sheet

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Part Number:
IRFI9Z24N
Mfg:
International Rectifier
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -9.5 A
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -6.7
IDM Pulsed Drain Current -48
PD @TC = 25°C Power Dissipation 29 W
Linear Derating Factor 0.19 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 96 mJ
IAR Avalanche Current -7.2 A
EAR Repetitive Avalanche Energy 2.9 mJ
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)



Description

Fifth Generation HEXFETs IRFI9Z24N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 Fullpak IRFI9Z24N eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.




Parameters:

Technical/Catalog InformationIRFI9Z24N
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C9.5A
Rds On (Max) @ Id, Vgs175 mOhm @ 5.4A, 10V
Input Capacitance (Ciss) @ Vds 350pF @ 25V
Power - Max29W
PackagingTube
Gate Charge (Qg) @ Vgs19nC @ 10V
Package / CaseTO-220-3 Fullpak (Straight Leads)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRFI9Z24N
IRFI9Z24N



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