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IRFI654B

Features: • 21A, 250V, RDS(on) = 0.14Ω @VGS = 10 V• Low gate charge ( typical 95 nC)• Low Crss ( typical 60 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter IRFW654B / IRFI654B Unit VDSS ...

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IRFI654B: Features: • 21A, 250V, RDS(on) = 0.14Ω @VGS = 10 V• Low gate charge ( typical 95 nC)• Low Crss ( typical 60 pF)• Fast switching• 100% avalanche tested• Impr...

IRFI654B Data Sheet

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Part Number:
IRFI654B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/29

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Product Details

Description



Features:

• 21A, 250V, RDS(on) = 0.14Ω @VGS = 10 V
• Low gate charge ( typical 95 nC)
• Low Crss ( typical 60 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter IRFW654B / IRFI654B Unit

VDSS

Drain-Source Voltage

 250 V

ID

Drain Current    - Continuous (TC = 25°C)
                         - Continuous (TC = 100°C)

21

A

 13.3

 A

IDM

Drain Current    - Pulsed                                 (Note 1)

 84 A
VGSS Gate-Source Voltage ± 30 V

EAS

 Single Pulsed Avalanche Energy                     (Note 2) 700 mJ

IAR

 Avalanche Current                                          (Note 1)

21

A

EAR

Repetitive Avalanche Energy                          (Note 1)

15.6

mJ

 dv/dt

 Peak Diode Recovery dv/dt                            (Note 3)

 5.5

 V/ns

PD

Power Dissipation (TA = 25°C) *


3.13

W

 Power Dissipation (TC = 25°C)
                              - Derate above 25°C

 156

 W

1.25

 W/

TJ, Tstg

Operating and Storage Temperature Range

-55 to +150

TL

Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300




Description

These N-Channel enhancement mode power field effect transistors IRFI654B are produced using Fairchild's proprietary,planar, DMOS technology.

This advanced technology IRFI654B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.




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