IRFI260

Features:

Hermetically Sealed
Electrically Isolated
Simple Drive Requirements
Ease of Paralleling
Ceramic Eyelets


Specifications

	Parameter	IRFI260	Units
ID @ VGS = 10V, TC = 25°C	Continuous Drain Current	45*	A
ID @ VGS = 10V, TC = 100°C	Continuous Drain Current	29
IDM	Pulsed Drain Current	180
PD @ TC = 25°C	Max. Power Dissipation	300	W
	Linear Derating Factor	2.4 …	W/K
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	700	mJ
IAR	Avalanche Current	45	A
EAR	Repetitive Avalanche Energy	30	mJ
dv/dt	Peak Diode Recovery dv/dt	4.3	V/ns
TJ TSTG	Operating Junction Storage Temperature Range	-55 to 150
	Lead Temperature 300 (0.063 in. (1.6mm) from case for 10 sec.)
	Weight	10.9(typical)	g

Repetitive Rating; Pulse width limited by maximum junction temperature.
@ V_DD = 50V, Star ting T_J = 25°C, E_AS = [0.5 * L * (I_L²) * [BV_DSS/(BV_DSS-V_DD)]  Peak I_L = 45A, V_GS = 10V, 25   R_G 200
I_SD 45A, di/dt 130 A/s,V_DD BV_DSS, T_J 150°C  Suggested R_G = 2.35
Pulse width  300 s; Duty Cycle 2%
K/W = °C/W   W/K = W/°C


Description

HEXFET technology IRFI260 is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.

HEXFET transistors IRFI260 also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits and virtually any application where high reliability is required.

The HEXFET transistor's totally isolated package IRFI260 eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance.