Features: ·Super fast body diode eliminates the need for external diodes in ZVS applications.·Lower gate charge results in simpler drive requitements.·Enhanced dv/dt capabilities offer improved ruggedness·Higher gate voltage threshold offers improved noise immunityApplication·Zero voltage switchin...
IRFIB5N50L: Features: ·Super fast body diode eliminates the need for external diodes in ZVS applications.·Lower gate charge results in simpler drive requitements.·Enhanced dv/dt capabilities offer improved rugg...
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Parameter |
Max. |
Units | |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V |
4.7 |
A |
ID @ TC = 100 | Continuous Drain Current, VGS @ 10V |
3.0 | |
IDM | Pulsed Drain Current |
16 | |
PD @TC = 25 | Power Dissipation |
42 |
W |
Linear Derating Factor |
0.33 |
W/ | |
VGS | Gate-to-Source Voltage |
±30 |
V |
dv/dt | Peak Diode Recovery dv/dt |
19 |
V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) | ||
Mounting torque, 6-32 or M3 screw |
10lbin (1.1Nm) |