IRFI540N

MOSFET N-CH 100V 20A TO220FP

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IRFI540N Picture
SeekIC No. : 004377094 Detail

IRFI540N: MOSFET N-CH 100V 20A TO220FP

floor Price/Ceiling Price

US $ 4.41~4.41 / Piece | Get Latest Price
Part Number:
IRFI540N
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~250
  • Unit Price
  • $4.41
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/8/14

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Product Details

Description



Specifications

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 20 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 14
IDM Pulsed Drain Current 110
PD @TC = 25°C Power Dissipation 54 W
Linear Derating Factor 0.36 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 300 mJ
IAR Avalanche Current 16 A
EAR Repetitive Avalanche Energy 5.4 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)





Description

Fifth Generation HEXFETs IRFI540N from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The TO-220 Fullpak IRFI540N eliminates the need for additional insulating hardware in commercial-industrial applications.The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product.The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.






Parameters:

Technical/Catalog InformationIRFI540N
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C20A
Rds On (Max) @ Id, Vgs52 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds 1400pF @ 25V
Power - Max54W
PackagingTube
Gate Charge (Qg) @ Vgs94nC @ 10V
Package / CaseTO-220-3 Fullpak (Straight Leads)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRFI540N
IRFI540N



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