IRFIB5N65APBF

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 650 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-220 Full-Pak
Continuous Drain Current : 5.1 A
Resistance Drain-Source RDS (on) : 0.93 Ohms


Application

· Switch Mode Power Supply (SMPS)
· Uninterruptible Power Supply
· High Speed Power Switching
· High Voltage Isolation = 2.5KVRMS

· Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	5.1	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	3.2	A
IDM	Pulsed Drain Current	21	A
PD @ TC = 25°C	Power Dissipation	60	W
	Linear Derating Factor	0.48	W/
VGS	Gate-to-Source Voltage	±30	V
dv/dt	Peak Diode Recovery dv/dt	2.8	V/ns
TJ TSTG	Operating Junction Storage Temperature Range	-55 to 150	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )	°C
	Mounting torqe, 6-32 or M3 screw	10 lbf•in (1.1N•m)	g