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IRFI820B

Features: • 2.5A, 500V, RDS(on) = 2.6Ω @VGS = 10 V• Low gate charge ( typical 14 nC)• Low Crss ( typical 10 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter IRFW820B / IRFI820B Unit VDSS ...

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SeekIC No. : 004377122 Detail

IRFI820B: Features: • 2.5A, 500V, RDS(on) = 2.6Ω @VGS = 10 V• Low gate charge ( typical 14 nC)• Low Crss ( typical 10 pF)• Fast switching• 100% avalanche tested• Impr...

IRFI820B Data Sheet

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Part Number:
IRFI820B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 2.5A, 500V, RDS(on) = 2.6Ω @VGS = 10 V
• Low gate charge ( typical 14 nC)
• Low Crss ( typical 10 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter IRFW820B / IRFI820B Unit

VDSS

Drain-Source Voltage

 500 V

ID

Drain Current    - Continuous (TC = 25°C)
                         - Continuous (TC = 100°C)

2.5

A

 1.6

 A

IDM

Drain Current    - Pulsed                                 (Note 1)

 80 A
VGSS Gate-Source Voltage ± 30 V

EAS

 Single Pulsed Avalanche Energy                     (Note 2) 200 mJ

IAR

 Avalanche Current                                          (Note 1)

2.5

A

EAR

Repetitive Avalanche Energy                          (Note 1)

4.9

mJ

 dv/dt

 Peak Diode Recovery dv/dt                            (Note 3)

 5.5

 V/ns

PD

Power Dissipation (TA = 25°C) *


3.13

W

 Power Dissipation (TC = 25°C)
                              - Derate above 25°C

 49

 W

 0.39

 W/

TJ, Tstg

Operating and Storage Temperature Range

-55 to +150

TL

Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300




Description

These N-Channel enhancement mode power field effect transistors IRFI820B are produced using Fairchild's proprietary,planar, DMOS technology.

This advanced technology IRFI820B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies,power factor correction and electronic lamp ballasts based on half bridge.




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