IRFIB8N50KPBF

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.35 Ohms
Continuous Drain Current : 6.7 A
Package / Case : TO-220 Full-Pak


Features:

· Switch Mode Power Supply (SMPS)
· UninterruptIble Power Supply
· High Speed Power Switching
· Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current VGS @ 10V	6.7	A
ID @ TC = 100	Continuous Drain Current VGS @ 10V	4.2
IDM	Pulsed Drain Current	27
PD @ TC = 25	Power Dissipation	45	W
	Linear Derating Factor	0.67	W/
VGS	Gate-to-Source Voltage	±30	V
dv/dt	Peak Diode Recovery dv/dt	17	V/ns
TJ TSTG	Operating Junction Storage Temperature Range	-55 to 150
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torqe, 6-32 or M3 screw	1.1(10)	N•m (lbf•in)