IRFI9Z24G

MOSFET P-Chan 60V 8.5 Amp

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IRFI9Z24G Picture
SeekIC No. : 00158896 Detail

IRFI9Z24G: MOSFET P-Chan 60V 8.5 Amp

floor Price/Ceiling Price

US $ 1.58~1.7 / Piece | Get Latest Price
Part Number:
IRFI9Z24G
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~725
  • 725~1000
  • 1000~2000
  • Unit Price
  • $1.7
  • $1.63
  • $1.58
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/29

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 8.5 A
Resistance Drain-Source RDS (on) : 0.28 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Full-Pak Packaging : Tube    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Packaging : Tube
Drain-Source Breakdown Voltage : - 60 V
Resistance Drain-Source RDS (on) : 0.28 Ohms
Package / Case : TO-220 Full-Pak
Continuous Drain Current : 8.5 A


Features:

• Isolated Package
• High Voltage Isolation = 2.5 kVRMS (t = 60 s;f = 60 Hz)
• Sink to Lead Creepage Distance = 4.8 mm
• P-Channel
• 175 °C Operating Temperature
• Dynamic dV/dt Rating
• Low Thermal Resistance
• Lead (Pb)-free Available





Specifications

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS -60 V
Gate-Source Voltage VGS ±20
Continuous Drain Current VGS at -10 V TC = 25 ID -8.5 A
TC = 100 -6.0
Pulsed Drain Currenta IDM -34
Linear Derating Factor   0.24 W/
Single Pulse Avalanche Energyb EAS 200 mJ
Repetitive Avalanche Currenta IAR -8.5 A
Repetitive Avalanche Energya EAR 3.7 mJ
Maximum Power Dissipation TC = 25 PD 37 W
Peak Diode Recovery dV/dtc dV/dt -4.5 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175
Mounting Torque 6-32 or M3 screw   10
1.1
lbf ` in
N ` m
Soldering Recommendations (Peak Temperature) for 10 s   300d
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L = 3.2 mH, RG = 25 , IAS = - 8.5 A (see fig. 12).
c. ISD - 11 A, dI/dt 140 A/s, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply





Description

Third generation Power MOSFETs IRFI9Z24G from Vishay provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 FULLPAK IRFI9Z24G eliminates the need for additional insulating hardware in commercial-industrial applications.

The molding compound  IRFI9Z24G used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.






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