MOSFET P-Chan 60V 8.5 Amp
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 8.5 A | ||
Resistance Drain-Source RDS (on) : | 0.28 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220 Full-Pak | Packaging : | Tube |
PARAMETER | SYMBOL | LIMIT | UNIT | ||
Drain-Source Voltage | VDS | -60 | V | ||
Gate-Source Voltage | VGS | ±20 | |||
Continuous Drain Current | VGS at -10 V | TC = 25 | ID | -8.5 | A |
TC = 100 | -6.0 | ||||
Pulsed Drain Currenta | IDM | -34 | |||
Linear Derating Factor | 0.24 | W/ | |||
Single Pulse Avalanche Energyb | EAS | 200 | mJ | ||
Repetitive Avalanche Currenta | IAR | -8.5 | A | ||
Repetitive Avalanche Energya | EAR | 3.7 | mJ | ||
Maximum Power Dissipation | TC = 25 | PD | 37 | W | |
Peak Diode Recovery dV/dtc | dV/dt | -4.5 | V/ns | ||
Operating Junction and Storage Temperature Range | TJ, Tstg | - 55 to + 175 | |||
Mounting Torque | 6-32 or M3 screw | 10 1.1 |
lbf ` in N ` m | ||
Soldering Recommendations (Peak Temperature) | for 10 s | 300d |
Third generation Power MOSFETs IRFI9Z24G from Vishay provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 FULLPAK IRFI9Z24G eliminates the need for additional insulating hardware in commercial-industrial applications.
The molding compound IRFI9Z24G used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.