IRFI4024H-117P

Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Package / Case : TO-220FP
Configuration : Dual
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 600 mOhms


Features:

` Integrated half-bridge package
` Reduces the part count by half
` Facilitates better PCB layout
` Key parameters optimized for Class-D audio amplifier applications
` Low R<sub>DS(ON)</sub> for improved efficiency
` Low Qg and Qsw for better THD and improved efficiency
` Low Qrr for better THD and lower EMI
` Can delivery up to 100W per channel into 6 load in full-bridge configuration amplifier
` Lead-free package




Specifications

Symbol	Parameter	Max.	Unit
VDS	Drain-to-Source Voltage	88	V
VGS	Gate-to-Source Voltage	±20
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	11	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	6.9
IDM	Pulsed Drain Current	44
PD @TC = 25°C	Power Dissipation	14	W
PD @TC = 100°C	Power Dissipation	5.4
	Linear Derating Factor	0.11	W/°C
EAS	Single Pulse Avalanche Energy	7.4	mJ
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to +150	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)
	Mounting torque, 6-32 or M3 screw	10 lbf`in (1.1N`m)

1.Repetitive rating; pulse width limited by max. junction temperature.
2. Starting T_J = 25°C, L = 0.25mH, R_G = 25, I_AS = 7.7A.




Description

This Digital Audio MosFET Half-Bridge of the IRFI4024H-117P is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery,and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors of the IRFI4024H-117P such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable device for Class D audio amplifier applications.

Parameters:

Technical/Catalog Information	IRFI4024H-117P
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	60 mOhm @ 7.7A, 10V
Input Capacitance (Ciss) @ Vds	320pF @ 50V
Power - Max	14W
Packaging	Tube
Gate Charge (Qg) @ Vgs	13nC @ 10V
Package / Case	TO-220-5 Fullpak (Straight Leads)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFI4024H 117P IRFI4024H117P