Features: • 10A, 400V, RDS(on) = 0.54Ω @VGS = 10 V• Low gate charge ( typical 41 nC)• Low Crss ( typical 35 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter IRFW740B / IRFI740B Unit VDSS ...
IRFI740B: Features: • 10A, 400V, RDS(on) = 0.54Ω @VGS = 10 V• Low gate charge ( typical 41 nC)• Low Crss ( typical 35 pF)• Fast switching• 100% avalanche tested• Impr...
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Symbol | Parameter | IRFW740B / IRFI740B | Unit | |
VDSS |
Drain-Source Voltage |
400 | V | |
ID |
Drain Current - Continuous (TC = 25°C) |
10 |
A | |
6.3 |
A | |||
IDM |
Drain Current - Pulsed (Note 1) |
40 | A | |
VGSS | Gate-Source Voltage | ± 30 | V | |
EAS |
Single Pulsed Avalanche Energy (Note 2) | 450 | mJ | |
IAR |
Avalanche Current (Note 1) |
10 |
A | |
EAR |
Repetitive Avalanche Energy (Note 1) |
13.4 |
mJ | |
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns | |
PD |
Power Dissipation (TA = 25°C) * |
|
W | |
Power Dissipation (TC = 25°C) |
134 |
W | ||
1.08 |
W/ | |||
TJ, Tstg |
Operating and Storage Temperature Range |
-55 to +150 |
||
TL |
Maximum lead temperature for soldering purposes, |
300 |
These N-Channel enhancement mode power field effect transistors IRFI740B are produced using Fairchild's proprietary,planar, DMOS technology.
This advanced technology IRFI740B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.