Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Improved Gate Charge· Extended Safe Operating Area· Lower Leakage Current: 10mA (Max.) @ VDS = 400V· Lower RDS(ON): 0.437W (Typ.)Specifications Characteristic Symbol Value Units Drain-Source ...
IRFI740A: Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Improved Gate Charge· Extended Safe Operating Area· Lower Leakage Current: 10mA (Max.) @ VDS = 400V· L...
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Characteristic | Symbol | Value | Units | |
Drain-Source Voltage | VDSS | 400 | V | |
Continuous Drain Current | TC=25 | ID | 10 | A |
TC=100 | 6.3 | |||
Drain Current-Pulsed (1) | IDM | 40 | ||
Gate-to-Source Voltage | VGS | ±30 | V | |
Avalanche Current (1) | IAR | 10 | A | |
Repetitive avalanche energy (1) | EAR | 13.4 | mJ | |
Single Pulsed Avalanche Energy (2) | EAS | 457 | mJ | |
Peak diode recovery dv/dt (3) | dv/dt | 4.0 | V/ns | |
Total Power Dissipation (TA=25°C)*1 | PD | 3.1 | W | |
Total Power Dissipation (TC=25) | 134 | |||
Linear Derating Factor | 1.08 | W/ | ||
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds |
TL | 300 | ||
Junction and Storage Temperature Range | TJ, TSTG | - 55 to +150 |