IRFI9520N

MOSFET P-CH 100V 5.5A TO220FP

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IRFI9520N Picture
SeekIC No. : 003430703 Detail

IRFI9520N: MOSFET P-CH 100V 5.5A TO220FP

floor Price/Ceiling Price

US $ .54~.54 / Piece | Get Latest Price
Part Number:
IRFI9520N
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~500
  • Unit Price
  • $.54
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/6/6

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Product Details

Quick Details

Series: HEXFET® Manufacturer: Vishay Siliconix
FET Type: MOSFET P-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 100V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 5.5A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 480 mOhm @ 4A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) @ Vgs: 27nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 350pF @ 25V
Power - Max: 30W Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: TO-220-3    

Description

Manufacturer: Vishay Siliconix
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Type: MOSFET P-Channel, Metal Oxide
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Input Capacitance (Ciss) @ Vds: 350pF @ 25V
Gate Charge (Qg) @ Vgs: 27nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 5.5A
Power - Max: 30W
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: TO-220-3
Rds On (Max) @ Id, Vgs: 480 mOhm @ 4A, 10V


Specifications

Parameter

Max.

Units
ID @ VGS = 10V, TC = 25°C
Continuous Drain Current, VGS@- 10V
-5.5
A
ID @ VGS = 10V, TC =1 00°C
Continuous Drain Current, VGS@- 10V
-3.9
IDM
Pulsed Drain Current ➀
-27
PD @ TC = 25°C
Power Dissipation
30
W
Linear Derating Factor
0.2
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy ➁
140
mJ
IAR
Avalanche Current ➀
-4.0
A
EAR
Repetitive Avalanche Energy ➀
3.0
mJ
dv/dt
Peak Diode Recovery dv/dt ➂
-5.0
V/ns
TJ
Operating Junction and 
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw
10 lbf•in (1.1N•m)
g



Description

Fifth Generation HEXFETs IRFI9520N from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 Fullpak IRFI9520N eliminates the need for additional insulating hardware in commercial-industrial applications.  The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink.  This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product.  The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.




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