Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Drain-Source Breakdown Voltage
: 100 V
Mounting Style
: Through Hole
Packaging
: Tube
Continuous Drain Current
: 17 A
Package / Case
: TO-220 Full-Pak
Resistance Drain-Source RDS (on)
: 0.077 Ohms
Features: SpecificationsDescriptionThe IRFI540G has seven features.The first one is isolated package.The second one is high voltage isolation=2.5KVRMS.The third one is sink to lead creepage dist.=4.8mm.The fourth one is 175 operating temperature.The fifth one is fast switching.The sixth one is dynamic dv/dt rating.The seventh one is low thermal resistance.
Third generation HEXFETs of the IRFI540Gfrom international rectifier provide the designer with the best combination of fast switching,ruggedized device design,low on-resistance and cost-effectiveness.The TO-220 fullpak eliminates the need for additional insulating hardware in commerical-industrial applications.The moulding compound used provides a high isolation capability and a low thermal resistance between the lab and external heatsink.This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product.The fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
The IRFI540G has some absolute maximum ratings.When parameter is continuous drain current,VGS @ 10V,the symbol is ID@TC=25,the Max. is 17,the units is A.When parameter is continuous drain current,VGS @ 10V,the symbol is ID@TC=100,the Max. is 12,the units is A.When parameter is pulsed drain current,the symbol is IDM,the Max. is 68,the units is A.When parameter is power dissipation,the symbol is PD@TC=25,the Max. is 48,the units is W.When parameter of the IRFI540G is junction and storage temperature range,the Max. is -55 to +175,the units is .When parameter is soldering temperature,for 10 seconds,the Max. is 300(1.6mm from case),the units is .
IRFI540G Data Sheet
