IRFIB8N50K

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.35 Ohms
Continuous Drain Current : 6.7 A
Package / Case : TO-220 Full-Pak


Application

· Switch Mode Power Supply (SMPS)
· UninterruptIble Power Supply
· High Speed Power Switching


Specifications

	Parameter	Max.	Units
ID @TC = 25°C	Continuous Drain Current, VGS @ 10V	6.7	A
ID @TC = 100°C	Continuous Drain Current, VGS @ 10V	4.2
IDM	Pulsed Drain Current	27
PD @TC = 25°C	Power Dissipation	45	W
	Linear Derating Factor	0.36	W/°C
VGS	Gate-to-Source Voltage	±30	V
dv/dt	Peak Diode Recovery dv/dt	17	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 150	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting Torque, 6-32 or M3 Screw	10 lbf•in (1.1 N•m)