IRFIBC40GLC

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 3.5 A
Package / Case : TO-220 Full-Pak
Resistance Drain-Source RDS (on) : 1.2 Ohms


Features:






Specifications






Description

IRFIBC40GLC is a kind of HEXFET power MOSFET. There are some features as follows. First is isolated package. The second is high voltage isolation which is 2.5 KVRMS. Then is sink to lead creepage dist which is 4.8 mm. Next is dynamic dv/dt rating. The last one is low thermal resistance.

What comes next is about the absolute maximum ratings IRFIBC40GLC. The maximum IC (continuous drain current) is 3.5 A at VGS=10 V, TA=25 and 2.2 A at VGS=10 V, TA=100. The IDM (pulsed drain current) is 14 A. The PD (power dissipation) is 40 W at TC=25. The VGS (gate-to-source voltage) is ±20 V. The EAS (single pulse avalanche energy) is 320 mJ. The IAR (avalanche current) is 3.5 A. The EAR (repetitive avalanche energy) is 4.0 mJ. The dv/dt (peak diode recovery dv/dt) is 3.0 V/ns. The TJ, TSTG (operating junction and storage temperature range) is from -55 to +150. The soldering temperature, for 10 seconds is 300 (1.6 mm from case). Then is about the thermal resistance. The maximum RJC (junction to case) is 3.1/W and the maximum RJA (junction to ambient) is 65/W.

The following is about the electrical characteristics (TJ=25 unless otherwise specified) IRFIBC40GLC. The minimum V(BR)DSS (drain-to-source breakdown voltage) is 600 V at VGS=0 V, ID=250A. The maximum RDS(on) (static drain-to-source on-resistance) is 1.2 at VGS=10 V, ID=2.1 A. The minimum VGS(th) (gate threshold voltage) is 2.0 V and the maximum is 4.0 V at VDS=VGS, ID=250A. The minimum gfs (forward transconductance) is 3.7 S when VDS=100 V, ID=3.7 A.