IRFH7932TRPBF

Configuration :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Transistor Polarity : N-Channel
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : 20 V
Resistance Drain-Source RDS (on) : 3.9 mOhms
Continuous Drain Current : 104 A


Pinout




Description

The IRFH7932TRPBF is designed as one kind of HEXFET power MOSFETs with typical applications of synchronous MOSFET for notebook processor power and synchronous rectifer MOSFET for isolated DC-DC converters in networking systems.

It has eight features of the IRFH7932TRPBF. (1)Very low RDS(ON) at 4.5V Vgs. (2)Low gate charge. (3)Fully characterized avalanche voltage and current. (4)100% tested for RG. (5)Lead-free (qualified up to 260°C reflow). (6)RoHS compliant (halogen free). (7)Low thermal resistance. (8)Large source lead for more reliable soldering. Those are all the main features.

Some absolute maximum ratings of the IRFH7932TRPBF have been concluded into several points as follow. (1)Its drain to source voltage would be 30V. (2)Its gate to source voltage would be +/-20V. (3)Its continuous drain current, Vgs=10V would be 25A at Ta=25°C and would be 20A at Ta=70°C and would be 104A at Tc=25°C. (4)Its pulsed drain current would be 200A. (5)Its power dissipation would be 3.4W at Ta=25°C and would be 2.2W at Ta=70°C. (6)Its linear derating factor would be 0.03W/°C. (7)Its operating junction temperature range of the IRFH7932TRPBF would be from -55°C to 150°C. (8)Its storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of the IRFH7932TRPBF are concluded as follow. (1)Its drain to source breakdown voltage would be min 30V. (2)Its breakdown voltage temperature coefficient would be typ 0.021V/°C. (3)Its static drain to source on-resistance would be typ 2.5mohms and max 3.3mohms at Vgs=10V and Id=25A. (4)Its gate threshold voltage would be min 1.35V and typ 1.8V and max 2.35V. (5)Its gate threshold voltage coefficient would be typ -5.9mV/°C. (6)Its gate to source forward leakage would be max 100nA. (7)Its gate to source reverse leakage fo the IRFH7932TRPBF would be max -100nA. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!

Parameters:

Technical/Catalog Information	IRFH7932TRPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	24A
Rds On (Max) @ Id, Vgs	3.3 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds	4270pF @ 15V
Power - Max	3.1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	51nC @ 4.5V
Package / Case	8-PQFN
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFH7932TRPBF IRFH7932TRPBF IRFH7932TRPBFTR ND IRFH7932TRPBFTRND IRFH7932TRPBFTR