IRFIB7N50APBF

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-220 Full-Pak
Continuous Drain Current : 6.6 A
Resistance Drain-Source RDS (on) : 0.52 Ohms


Features:

· Low Gate Charge Qg results in Simple Drive Requirement
· Improved Gate, Avalanche and dynamic dv/dt Ruggedness
· Fully Characterized Capacitance and Avalanche Voltage and Current
· Effective Coss specified ( See AN 1001)


Application

` Switch Mode Power Supply ( SMPS )
` Uninterruptable Power Supply
` High speed power switching
` High Voltage Isolation = 2.5KVRMS
` Lead-Free


Specifications

	Paramete	Max.	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10V	6.6	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10V	4.2
IDM	Pulsed Drain Current	44
PD @TC = 25	Power Dissipation	60	W
	Linear Derating Factor	0.48	W/
VGS	Gate-to-Source Voltage	± 30	V
dv/d	Peak Diode Recovery dv/dt	6.9	V/ns
TJ,TSTG	Operating Junction and Storage Temperature Range	-55 to + 150
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torqe, 6-32 or M3 screw	10 lbf•in (1.1N•m)