IRFI840GLC

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 4.5 A
Resistance Drain-Source RDS (on) : 0.85 Ohms
Package / Case : TO-220 Full-Pak


Features:






Specifications






Description

The IRFI840GLC has 7 features.The first one is ultra low gate change.The second one is reduced gate drive requirement.The third one is enhanced 30V VGS rating.The fourth one is isolated package.The fifth one is high voltage isolation=2.5KVRMS.The sixth one is sink to lead creepage dist.=4.8mm.The seventh one is repetitive avalanche rated.

This new series of low change HEXFETs IRFI840GLC achieve significantly lower gate charge over conventional MOSFETs.Utilizing advanced HEXFET technology,the device improvements allow for reduced gate drive requirments,faster awitching speeds and increased total system savings.These device improvements combined with the power ruggedness and reliability that are characteristic of HEXFETs offer the designer a new standard in power transistors for switching applications.The TO-220 fullpak eliminates the need for additional insulating hardware.The moulding compound used provides a high isolation capability and low thermal resistance between the tab and external heatsink.

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