IRFIBC40GLCPBF

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 3.5 A
Package / Case : TO-220 Full-Pak
Resistance Drain-Source RDS (on) : 1.2 Ohms


Description

The IRFIBC40GLCPbF is deisgned as the third generational HEXFET from international rectifier which provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

IRFIBC40GLCPbF has six features. (1)Isolated package. (2)High voltage isolation which would be 2.5KVrms. (3)Sink to lead creepage dist which would be 4.8mm. (4)Dynamic dv/dt rating. (5)Low thermal resistance. (6)Lead free. That are all the main features.

Some absolute maximum ratings IRFIBC40GLCPbF have been concluded into several points as follow. (1)Its continuous drain current Vgs=10V would be max 3.5A at 25°C and would be max 2.2A at 100°C. (2)Its pulsed drain current would be 14A. (3)Its power dissipation would be 40W. (4)Its linear derating factor would be 0.32W/°C. (5)Its gate to source voltage would be +/-20V. (6)Its single pulse avalanche energy would be 320mJ. (7)Its repetitive avalanche energy would be 4.0mJ. (8)Its peak diode recovery dv/dt would be 3.0V/ns. (10)Its junction and storage temperature range would be from -55°C to +150°C. (11)Its soldering temperature for 10 seconds would be 300°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics IRFIBC40GLCPbF are concluded as follow. (1)Its drain to source breakdown voltage would be min 600V. (2)Its breakdown voltage temperature coefficient would be typ 0.7V/°C. (3)Its static drain to source on resistance would be max 1.2 ohms at Vgs=10V and Id=2.1A. (4)Its gate threshold voltage would be min 2.0V and max 4.0V. (5)Its forward transconductance would be min 3.7S. (6)Its drain to source leakage current would be max 25uA at Vds=600V and Vgs=0V and would be max 250uA at Vds=480V and Vgs=0V and Tj=125°C. (7)Its gate to source forward leakage would be max 100nA at Vgs=20V. (8)Its gate to source reverse leakage would be max -100nA at Vgs=-20V. And so on. If you have any question or suggestion or want to know more information please contact us for IRFIBC40GLCPbF details. Thank you!