MOSFET 100V Single N-Channel HEXFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 1.3 A | ||
Resistance Drain-Source RDS (on) : | 270 mOhms | Configuration : | Single Dual Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | HexDIP-4 | Packaging : | Tube |
IRFD120 | UNITS | ||
Drain to Source Voltage (Note 1) | VDS | 100 | V |
Drain to Gate Voltage (RGS = 20k) (Note 1) | VDGR | 100 | V |
Continuous Drain Current | ID | 1.3 | A |
Pulsed Drain Current (Note 3) | IDM | 5.2 | A |
Gate to Source Voltage | VGS | ±20 | V |
Maximum Power Dissipation | PD | 1.0 | W |
Linear Derating Factor | 0.008 | W/ | |
Single Pulse Avalanche Energy Rating (Note 4) | EAS | 36 | mJ |
Operating and Storage Temperature | TJ, TSTG | -55 to 150 | |
Maximum Temperature for Soldering | |||
Leads at 0.063in (1.6mm) from Case for 10s | TL | 300 | |
Package Body for 10s, See Techbrief 334 | Tpkg | 260 |