Features: • 0.4A and 0.5A, 60V and 100V• rDS(ON) = 2.4W and 3.2W• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• High Input Impedance• Majority Carrier Device• Related Literature - TB334 Guidelines fo...
IRFD1Z0: Features: • 0.4A and 0.5A, 60V and 100V• rDS(ON) = 2.4W and 3.2W• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• ...
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IRFD1Z0 | IRFD1Z1 | IRFD1Z2 | IRFD1Z3 | UNITS | ||
Drain to Source (Note 1). | VDS | 100 | 60 | 100 | 60 | V |
Drain to Gate Voltage (RGS = 20kW)(Note 1) | VDGR | 100 | 60 | 100 | 60 | V |
Continuous Drain Current. | ID | 0.5 | 0.5 | 0.4 | 0.4 | A |
Pulsed Drain Current | IDM | 4.0 | 4.0 | 3.2 | 3.2 | A |
Maximum Power Dissipation | PD | 1.0 | 1.0 | 1.0 | 1.0 | W |
Linear Derating Factor (See Figure 1) | 0.008 | 0.008 | 0.008 | 0.008 | W/oC | |
Operating and Storage Temperature | TJ,TSTG | -55 to 150 | -55 to 150 | -55 to150 | -55 to150 | oC |
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s |
TL | 300 | 300 | 300 | 300 | oC |
Package Body for 10s, See Techbrief 334 | Tpkg | 260 | 260 | 260 | 260 | oC |
These are N-Channel enhancement mode silicon gate power field effect transistors IRFD1Z0 designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.
Formerly developmental type IRFD1Z0.