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IRFE430

Features: · Hermetically Sealed· Simple Drive Requirements· Ease of Paralleling· Small footprint· Surface Mount· LightweightSpecifications Parameter Max. Units EAS Single Pulse Avalanche Energy ➁ 0.31 mJ VGS Gate-to-Source Voltage ± 20 V ID @ TC = 25°C Continuous D...

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SeekIC No. : 004377047 Detail

IRFE430: Features: · Hermetically Sealed· Simple Drive Requirements· Ease of Paralleling· Small footprint· Surface Mount· LightweightSpecifications Parameter Max. Units EAS Single Pulse Avalanc...

IRFE430 Data Sheet

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Part Number:
IRFE430
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/29

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Product Details

Description



Features:

·  Hermetically Sealed
·  Simple Drive Requirements
·  Ease of Paralleling
·  Small footprint
·  Surface Mount
·  Lightweight


Specifications

Parameter Max. Units
EAS Single Pulse Avalanche Energy ➁ 0.31 mJ
VGS Gate-to-Source Voltage ± 20 V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 2.5 A
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 1.5 A
IDM Pulsed Drain Current 11 A
PD @TC = 25°C Power Power Dissipation 25 W
Linear Derating Factor 0.20 W/K
dv/dt Peak Diode Recovery dv/dt 6.2 V/nS
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Surface Temperature 300 ( for 5 seconds) °C
Weight 0.42 (typical) g



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