FET Feature: Logic Level Gate
Mounting Type: Surface Mount
FET Type: 2 P-Channel (Dual)
Drain to Source Voltage (Vdss): 20V
Vgs(th) (Max) @ Id: 1V @ 250µA
Power - Max: 2W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Current - Continuous Drain (Id) @ 25° C: 9A
Series: HEXFET®
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 18 mOhm @ 9A, 4.5V
Gate Charge (Qg) @ Vgs: 63nC @ 5V
Input Capacitance (Ciss) @ Vds: 2940pF @ 15V
Packaging: Tube
Specifications
|
Parameter |
Max. |
Units |
|
VDS |
Drain- Source Voltage |
-20 |
V |
|
ID @ TA = 25°C |
Continuous Drain Current, VGS @ -4.5V |
-9.0 |
A |
|
ID @ TA= 70°C |
Continuous Drain Current, VGS @ -4.5V |
-7.1 |
|
IDM |
Pulsed Drain Current |
-71 |
|
PD @TA = 25°C |
Maximum Power Dissipationƒ |
2.0 |
W |
|
PD @TA = 70°C |
Maximum Power Dissipationƒ |
1.3 |
W |
|
|
Linear Derating Factor |
16 |
mW/°C |
|
VGSM |
Gate-to-Source Voltage |
± 12 |
V |
|
TJ, TSTG |
Junction and Storage Temperature Range |
-55 to + 150 |
°C |
DescriptionNew trench HEXFET® Power MOSFETs IRF7324 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for,provides the designer with an extremely efficient and reliable device IRF7324 for use in battery and load management applications.
IRF7324 Data Sheet
