Mounting Style
: SMD/SMT
Transistor Polarity
: P-Channel
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Package / Case
: SOIC-8
Configuration
: Dual
Drain-Source Breakdown Voltage
: - 12 V
Gate-Source Breakdown Voltage
: 8 V
Continuous Drain Current
: - 7.8 A
Resistance Drain-Source RDS (on)
: 24 m Ohms
Features: ·Trench Technology
·Ultra Low On-Resistance
·Dual P-Channel MOSFET
·Low Profile (<1.8mm)
·Available in Tape & Reel
·Lead-FreePinout
Specifications
| |
Parameter |
Max. |
Units |
| VDS |
Drain-Source Voltage |
-12 |
V |
| VGS |
Gate-to-Source Voltage |
±8.0 |
V |
| ID @ TA = 25 |
Continuous Drain Current,VGS @ -4.5V |
-7.8 |
A |
| ID @ TA = 70 |
Continuous Drain Current,VGS @ -4.5V |
-6.2 |
| IDM |
Pulsed Drain Current |
-39 |
| PD @TA = 25 |
CPower Dissipatio |
2.0 |
W |
| PD @TA = 70 |
CPower Dissipatio |
1.3 |
W |
| |
Linear Derating Factor |
16 |
W/ |
| TJ, TSTG |
Junction and Storage Temperature Range |
-55 TO +150 |
|
DescriptionNew P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized IRF7325PbF design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 IRF7325PbF has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering technique
Parameters: | Technical/Catalog Information | IRF7325PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25° C | 7.8A |
| Rds On (Max) @ Id, Vgs | 24 mOhm @ 7.8A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 2020pF @ 10V |
| Power - Max | 2W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 33nC @ 4.5V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF7325PBF
IRF7325PBF
|
IRF7325PBF Data Sheet
